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B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

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B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : B772

Collector-Base Voltage : -40v

Junction Temperature : 150 ℃

Emitter-Base Voltage : -5V

Application : mobile power supply/ led driver/motor control

Storage Temperature : -55~150 ℃

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SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN)

FEATURE

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5VLow speed switching

Marking :B772

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 0.5 W
RӨJA Thermal Resistance, Junction to Ambient 250 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~150 ℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V
Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA
Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA
DC current gain hFE VCE= -2V, IC= -1A 60 400
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V

Transition frequency

fT

VCE= -5V, IC=-0.1A

f =10MHz

50

MHz



Typical Characteristics

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V


Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047

CLASSIFICATION OF hFE

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

Typical Characteristics

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V




Product Tags:

high frequency transistor

      

power mosfet transistors

      
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